Processes for fabricating low-force wafer test probes and their structures

ABSTRACT

Embodiments herein describe structures of low-force wafer test probes and formation thereof. Structures of low-force wafer test probes and their formation via gray scale etch or electroplating is described. Structures are described that include a lower base structure on top of a substrate and an upper blade structure on top of the lower base structure. In various embodiments, a crown of a C4 bump is accommodated by one or both of: i) a cavity present in the lower base structure; and ii) a height of the upper blade structure. Processes for fabricating probe structures are described that include forming lower base structures upon a substrate and forming upper blade structures on top of the lower base structures. The upper blade structures include at least one blade. Each of the blade(s) include a cutting edge that points toward a center point within the probe structure.

BACKGROUND

The present invention generally relates to testing wafers upon whichelectronic circuits are formed, and more particularly, to processes forfabricating test probes with blades that cut through the oxide layer ofcontrolled collapse chip connect (C4) bumps using minimal force.

An important facet of the semiconductor industry resides in being ableto provide satisfactorily functioning semiconductor devices. Inparticular, such semiconductor devices may comprise wafers which aredivided into areas which form chips, the shapes and dimensions of whichare as close to identical as possible, so as to impart consistentuniform electrical properties thereto.

Generally, semiconductor devices on chips are often connected to eachother with thin strips of metal, referred to in the art asinterconnection metallurgy, which in turn contact the wafer surfacethrough a series of pads or bumps. Other connector pad configurationsinclude an array of electrical contacts or bumps which are distributedover an area such as the widely employed C4 bumps (controlled collapsechip connects). Such bumps or electrical contacts extend above theintegrated circuits and have a generally spherical or roundcross-sectional configuration.

SUMMARY

Embodiments herein describe structures of low-force wafer test probesand formation thereof. In some embodiments, structures of low-forcewafer test probes and their formation via a gray scale etch isdescribed. In some embodiments, a structure is described usingelectroplating that includes a lower base structure on top of asubstrate and an upper blade structure on top of the lower basestructure. A crown of a C4 bump is accommodated by one or both of: i) acavity present in the lower base structure; and ii) a height of theupper blade structure. In some embodiments, a process for fabricating aprobe structure on a substrate is described. The process includesforming a lower base structure upon a substrate and forming an upperblade structure on top of the lower base structure. The upper bladestructure includes at least one blade. Each of the at least one bladeincludes a cutting edge that points toward a center point within theprobe structure.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The following detailed description, given by way of example and notintended to limit the disclosure solely thereto, will best beappreciated in conjunction with the accompanying drawings, in which:

FIGS. 1A and 1B illustrate respectively: i) a plurality of probes inalignment with a plurality of C4 bumps prior to coming into contact withthe plurality of C4 bumps; and ii) the plurality of probes in actualcontact with the plurality of C4 bumps, in accordance with an exemplaryembodiment of the present invention.

FIG. 2 illustrates a first etched pattern on top of a photoresist layerto expose underlying conductive material in the form of etchedelliptical openings and a circular opening, in accordance with anexemplary embodiment of the present invention.

FIG. 3 illustrates a gray scale etch of the structure shown in FIG. 2,in accordance with an exemplary embodiment of the present invention.

FIG. 4 illustrates a second etched pattern on top of a photoresist layerto expose underlying conductive material in the form of etched bracketopenings and a circular opening, in accordance with an exemplaryembodiment of the present invention.

FIG. 5 illustrates a gray scale etch of the structure shown in FIG. 4,in accordance with an exemplary embodiment of the present invention.

FIGS. 6 and 7 illustrate respectively: i) the structure obtained afterphotoresist layer removal of the structure shown in FIG. 5 and from athree-dimension 21° angle; and ii) the structure obtained afterphotoresist layer removal of the structure shown in FIG. 5 and from athree-dimension 45° angle, in accordance with an exemplary embodiment ofthe present invention.

FIGS. 8A, 8B, and 9 depict a top view, angled view, and cross-sectionalslice view, respectively, of a probe on a substrate formed via a grayscale etch, in accordance with an exemplary embodiment of the presentinvention.

FIGS. 10A and 10B show, respectively, a top view and a cross sectionslice depicting the formation of a photoresist layer on top of a probeon a substrate followed by lithography to form an opening in thephotoresist layer, in accordance with an exemplary embodiment of thepresent invention.

FIG. 11 depicts the formation of an opening via a wet etch of thestructure depicted in FIG. 10B, in accordance with an exemplaryembodiment of the present invention.

FIGS. 12A and 12B depict, respectively, a top view and a cross sectionslice of the probe structure in FIG. 11 after removal of the photoresistlayer, in accordance with an exemplary embodiment of the presentinvention.

FIG. 13 depicts an example of a probe on a substrate that includes anupper blade structure and a lower base structure, in accordance with anexemplary embodiment of the present invention.

FIGS. 14A and 14B depict, respectively, a top view and a cross sectionalslice of the lithographical formation of a toroidal cavity on asubstrate, in accordance with an exemplary embodiment of the presentinvention.

FIGS. 15A and 15B depict, respectively, a top view and a cross sectionalslice of the formation of a layer of conductive material on thestructure depicted in FIGS. 14A and 14B followed by mechanicalplanarization to form a lower base structure on top of the substrate, inaccordance with an exemplary embodiment of the present invention.

FIGS. 16A and 16B depict, respectively, a top view and a cross sectionalslice of the lithographical formation of a circular cavity on asubstrate, in accordance with an exemplary embodiment of the presentinvention.

FIGS. 17A and 17B depict, respectively, a top view and a cross sectionalslice of the deposition of conductive material onto the structuresdepicted in FIGS. 16A and 16B followed by mechanical planarization toprovide a circular pad on top of the substrate and imbedded in thephotoresist layer, in accordance with an exemplary embodiment of thepresent invention.

FIGS. 18A and 18B depict, respectively, a top view and a cross sectionalslice of the deposition of a photoresist onto the structures depicted inFIGS. 17A and 17B followed by lithography to form an opening, inaccordance with an exemplary embodiment of the present invention.

FIG. 19 depicts the formation of cavity via a wet etch of the structuredepicted in FIG. 18B, in accordance with an exemplary embodiment of thepresent invention.

FIGS. 20A and 20B depict, respectively, a top view and a cross sectionalslice of the removal of photoresist from the structure depicted in FIG.19 to provide a lower base structure, in accordance with an exemplaryembodiment of the present invention.

FIGS. 21A and 21B depict, respectively, a top view and a cross sectionalslice of the lithographical formation of a toroidal cavity on top of acircular pad, in accordance with an exemplary embodiment of the presentinvention.

FIGS. 22A and 22B depict, respectively, a top view and a cross sectionalslice of the formation of a layer of conductive material on thestructure depicted in FIGS. 21A and 21B followed by mechanicalplanarization to form a lower base structure on top of the substrate, inaccordance with an exemplary embodiment of the present invention.

FIGS. 23A and 23B depict, respectively, a top view and a cross sectionalslice of the formation of a blade cavity, in accordance with anexemplary embodiment of the present invention.

FIGS. 24A and 24B depict, respectively, a top view and a cross sectionalslice of a first example of the formation of an upper blade structure ontop of a lower base structure, in accordance with an exemplaryembodiment of the present invention.

FIGS. 25A and 25B depict, respectively, a top view and a cross sectionalslice of a second example of the formation of an upper blade structureon top of a lower base structure, in accordance with an exemplaryembodiment of the present invention.

FIGS. 26A and 26B depict, respectively, a top view and a cross sectionalslice of a third example of the formation of an upper blade structure ontop of a lower base structure, in accordance with an exemplaryembodiment of the present invention.

FIGS. 27A and 27B depict, respectively, a top view and a cross sectionalslice of a fourth example of the formation of an upper blade structureon top of a lower base structure, in accordance with an exemplaryembodiment of the present invention.

FIG. 28 depicts an example of a rounded blade tip as observedmicroscopically, in accordance with an exemplary embodiment of thepresent invention.

The drawings are not necessarily to scale. The drawings are merelyschematic representations, not intended to portray specific parametersof the invention. The drawings are intended to depict only typicalembodiments of the invention.

DETAILED DESCRIPTION I. Introduction

Although wafers are formed as uniformly as possible through currentmanufacturing techniques, it is not always feasible that every chipproduced is perfect. In order to identify defective chips, electricaltests are performed to facilitate the sorting out of good chips andeliminating defective chips prior the next step of manufacture.

Ordinarily, active testing of the wafers is performed by a test facilityin which the pads or areas on wafers possessing arrays of bumps, such asof C4 bumps, are contacted by an assembly incorporating test probes. Inorder to successfully probe the integrity of the pads or bumps, it isdesirable that an oxide layer, which inevitably forms on the surface ofthe C4 bumps, be ruptured and penetrated to ensure good electricalcontact with the probe while employing only a minimal force to inhibitdamaging the pads or bumps.

A substrate having a plurality of probes mounted thereto is used toperform a test on the plurality of C4 bumps of a wafer simultaneously.Each probe technology has a characteristic system compliance or springrate, thus the correct probe force occurs at a specific probedisplacement relative to the wafer. Consequently, current wafer testingpractice is to displace the wafer the specified distance into the probesystem. Unfortunately, the resulting forces may result in significantdeflection of the probe support structure. This may be especiallyproblematic for rigid probe arrays that incorporate a large number ofprobes because overdrive must be increased to overcome deflection of thesupport structure. As a result, the contact area, and therefore thecontact force, applied by the probes to each of the plurality of C4bumps may vary across the array.

Citation of an “embodiment” or a similar expression in the specificationmeans that specific features, structures, or characteristics describedin the embodiments are included in at least one embodiment of thepresent invention. Hence, the wording “in an embodiment” or a similarexpression in this specification does not necessarily refer to the samespecific embodiment as other embodiments.

Embodiments of the present invention are, at times, combinable. Thus, itshould be understood that when two or more embodiments are claimed in aparticular combination, that particular combination is feasible asreadily understood by a person having ordinary skill in the art and,hence, included in the present Detailed Description even though thatcombination was not explicitly described.

Exemplary embodiments now will be described more fully herein withreference to the accompanying drawings, in which exemplary embodimentsare shown. In the following detailed description, numerous specificdetails are set forth in order to provide a thorough understanding ofvarious embodiments of the invention. However, it is to be understoodthat embodiments of the invention may be practiced without thesespecific details. As such, this disclosure may be embodied in manydifferent forms and should not be construed as limited to the exemplaryembodiments set forth herein. Rather, these exemplary embodiments areprovided so that this disclosure will be thorough and complete and willfully convey the scope of this disclosure to those skilled in the art.In the description, details of well-known features and techniques may beomitted to avoid unnecessarily obscuring the presented embodiments. Itshould be understood that the present invention could be modified bythose skilled in the art in accordance with the following description toachieve the results of the present invention. Therefore, the followingdescription shall be considered as an explanatory disclosure related tothe present invention for those skilled in the art, not intended tolimit the claims of the present invention.

For purposes of the description hereinafter, terms such as “upper”,“lower”, “right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, andderivatives thereof shall relate to the disclosed structures andmethods, as oriented in the drawing figures. Terms such as “above”,“overlying”, “atop”, “on top”, “positioned on” or “positioned atop” meanthat a first element, such as a first structure, is present on a secondelement, such as a second structure, wherein intervening elements, suchas an interface structure may be present between the first element andthe second element. The term “direct contact” means that a firstelement, such as a first structure, and a second element, such as asecond structure, are connected without any intermediary conducting,insulating or semiconductor layers at the interface of the two elements.

In the interest of not obscuring the presentation of embodiments of thepresent invention, in the following detailed description, someprocessing steps or operations that are known in the art may have beencombined together for presentation and for illustration purposes and insome instances may have not been described in detail. In otherinstances, some processing steps or operations that are known in the artmay not be described at all. It should be understood that the followingdescription is rather focused on the distinctive features or elements ofvarious embodiments of the present invention.

As used herein, terms such as “depositing”, “forming”, and the likerefer to the disposition of layers or portions of materials in thepresent embodiments. Such processes may not be different than in thestandard practice of the art of wafer test probe fabrication.

The present invention will now be described in detail with reference tothe Figures.

Referring now to FIG. 1A, an example of an array 30 of test probes 32used to test the electrical conductivity of an electrical semiconductorwafer 20 is illustrated. The semiconductor wafer 20 includes a pluralityof conductive bumps 22, also referred to as controlled collapse chipconnects (“C4 bumps”), which have a generally spherical or curved topshape. In various embodiments, the semiconductor wafer 20 includes abase layer 24 formed from a substrate, such as an organic or ceramicmaterial for example, having a specific structure or openings. In oneembodiment, the base layer 24 includes a single layer of material. Inother embodiments, the base layer 24 includes multiple layers ofmaterial. In one embodiment, the wafer 20 as supported in a test fixturehas the capability of moving in one or more directions prior toelectrical contact for indexing the position of the wafer 20 and thecircuit on the wafer 20 to be tested. In other embodiments, the wafer 20as supported in a test fixture does not have the capability of moving inone or more directions prior to electrical contact for indexing theposition of the wafer 20 and the circuit on the wafer 20 to be tested.

As shown, the probes 32 of the array 30 are mounted to a structure 34 ina configuration such that each probe 32 is substantially aligned withone of the C4 bumps 22 on a semiconductor wafer 20. Each of the probes32 has a longitudinal axis X which passes through the center of theprobe 32 such that a height of each probe 32 may be measured along thelongitudinal axis. When the probe 32 is in contact with C4 bumps 22, asshown in FIG. 1B, the distance between the structure 34 and the C4 bumps22 is less than the length of the probes 32, to ensure that a pressureor force is applied to each of the C4 bumps 22. The pressure or forceprovides penetration of the C4 bumps 22 resulting in piercing andexposing a new clean contact surface free of oxide below the formersurface 26 of the C4 bump 22.

II. Gray Scale Etch Processes for Forming Probes

FIG. 2 illustrates a top-down view of an etched pattern on top of aphotoresist layer 9 to expose underlying conductive material in the formof etched elliptical openings E5, E6, and E7 and circular opening C8. Invarious embodiments, the conductive material exposed by etchedelliptical openings E5, E6, E7, and circular opening C8 is anyconductive material that can be wet-etched. Examples of such conductivematerial include one or more of: copper, molybdenum, aluminum, etc.Photoresist 9 is any photoresist that allows an etched resolution forthe openings as described infra. In one embodiment, the photoresist usedis AZ1518. In the example depicted by FIG. 2, etched elliptical openingsE5, E6, and E7 symmetrically surround etched circular opening C8. Inthis example, the symmetry of ellipses E5, E6, and E7 surroundingcircular opening C8 is C3. Other embodiments of the present inventionare not limited to a C3 symmetry. In other words, other embodiments ofthe present invention include more than three ellipses or less thanthree ellipses symmetrically surrounding a circular opening such ascircular opening C8.

In the example depicted by FIG. 2, etched elliptical openings E5 and E6all share substantially similar geometric dimensions as ellipticalopening E7. The dimensions described for FIG. 2 infra are dimensionsthat, after undergoing gray scale etching, will produce a probe openingthat accommodates a C4 bump with an approximately 100 μm diameter. Asdepicted in FIG. 2, the closest borders of elliptical opening E7 (likethe closest borders of elliptical openings E5 and E6) include a width w₁of approximately 6 μm between those borders in order to produce a probethat accommodates a C4 bump with a diameter of approximately 100 μm. Theaccommodation of smaller or larger diameter C4 bumps will require awidth w₁ that is, respectively, smaller or larger. As depicted in FIG.2, the widest borders of elliptical opening E7 include a length l₁ ofapproximately 27 μm (which is substantially similar to the correspondingwidest borders of elliptical openings E5 and E6) in order to produce aprobe that accommodates a C4 bump with a diameter of approximately 100μm. The accommodation of smaller or larger diameter C4 bumps willrequire a length l₁ that is, respectively, smaller or larger. Asdepicted in FIG. 2, a midpoint of one of the long-side borders ofelliptical openings E5, E6, and E7 are closest to the border of circularopening C8. As depicted in FIG. 2, the distance between the midpoint ofthe closest long-side border of E7 (i.e., E7 midpoint) is approximately15 μm from the nearest border of circular opening C8. Analogously, themidpoints of the closest long-side borders of E5 and E6 are of asubstantially similar distance from the closest borders of C8 relativeto E5 and E6.

In the example depicted by FIG. 2, circular opening C8, the border ofwhich is substantially equidistant from the midpoint of the closestlong-side borders of elliptical openings E5, E6, and E7 (i.e., 15 μm inthe example depicted in FIG. 2). Circular opening C8 includes a radiusr₁ that is approximately 7.5 μm.

FIG. 3 illustrates a gray scale etch of the structure shown in FIG. 2.In general, “gray scale etch” refers to the fabrication of sculpted testprobes that includes exposure and development of a pattern in aphotoresist layer overlying the conducting material of a conductingmaterial-clad flexible insulating material. The conducting material isetched in a solution that removes the conducting material by permeatingthrough patterned openings in the photoresist layer at varying ratesthat depend on the pattern of exposure and the development of theresist. Smaller/narrower openings in the pattern etch more slowly thanlarger/wider openings, leaving in the conducting material layer a grayscale pattern comprising the probes, probe pads, and conductingmaterial-free areas. The layout of the mask that is used to expose theresist and ultimately produce the gray scale pattern in the conductingmaterial layer is designed to accommodate the relationship betweensizes/shapes of openings and etch rates. Typical conditions used toproduce the example structures depicted in FIGS. 3 and 5 from,respectively, the structures depicted in FIGS. 2 and 4 include the useof CE100 etchant (purchased from TRANSENE COMPANY, INC.) applied using awet-etch at approximately 27° C. for approximately 8 minutes. Otheretchants and conditions may also produce similar results.

As depicted in FIG. 3, the gray scale etch of the structure shown inFIG. 2 creates cavity 9′, which is the result of etchant diffusionthrough openings E5-7 and C8. Material is removed immediately beneathopenings E5-7 and C8 as well as laterally between openings E5-7 and C8to create cavity 9′ beneath photoresist 9. Cavity 9′ includes the areasencompassed by openings E5-7 and C8, which are not covered by (i.e.,beneath) photoresist layer 9. In this example, cavity 9′ features lobesL5, L6, and L7 and blades B56, B67, and B75. The border of cavity 9′marks the beginning of a downward slope to create a bowl-like openingthat accommodates a C4 bump to be tested. Blades B56, B67, and B75 aredesigned to cut through areas of the C4 bump that come in contact withsaid blades in order to expose the non-oxidized C4 bump conductivematerial beneath an oxidized layer on the C4 bump.

In the example depicted in FIG. 3, the distance (i.e.,d_(B56 midpoint-C8center)) between the center of circular opening C8(i.e. C8 center) and the midpoint of blade B56 (i.e., B56 midpoint) isapproximately 34 μm. The distances between the center of circularopening C8 and the midpoints of blades B67 and B75 (i.e., B67 midpointand B75 midpoint, respectively) are substantially similar tod_(B56 midpoint-C8 center). The distance (i.e., d_(L6-C8 center))between the center of circular opening C8 and the furthest border oflobe L6, which is a line passing through the center of ellipticalopening E6 (i.e., E6 center), is approximately 52 μm in order toaccommodate a C4 bump with a diameter of approximately 100 μm. Thedistances between the center of circular opening C8 and the furthestborders of lobes of L5 and L7 (measured along lines (not shown) passingthrough E5 center and E7 center, respectively) are substantially similarto d_(L6-C8 center).

FIG. 4 illustrates a top-down view of an etched pattern on top of aphotoresist layer 14 to expose underlying conductive material in theform of etched bracket openings 10, 11, and 12 and circular opening 13.In various embodiments, the conductive material exposed by etchedelliptical openings 10, 11, 12, and circular opening 13 is anyconductive material that can be wet-etched. Examples of such conductivematerial include one or more of: copper, molybdenum, aluminum, etc. Likephotoresist 9, photoresist layer 14 is any photoresist that allows anetched resolution for the openings as described herein. In oneembodiment, the photoresist used is AZ1518. In the example depicted inFIG. 4, etched bracket openings 10, 11, and 12 symmetrically surroundetched circular opening 13. In this example, the symmetry of etchedbrackets 10, 11, and 12 surrounding circular opening 13 is C₃. Otherembodiments of the present invention are not limited to a C₃ symmetry.In other words, other embodiments of the present invention include morethan three etched brackets or less than three etched bracketssymmetrically surrounding a circular opening such as circular opening13.

In the example depicted by FIG. 4, etched bracket openings 10 and 11both share substantially similar geometric dimensions as etched bracketopening 12. As depicted in FIG. 4, the closest internal borders ofetched bracket opening 12 (like the closest internal borders of etchedbracket openings 10 and 11) include a width w₂ of approximately 5 μmbetween those borders. As depicted in FIG. 4, the widest internalborders of etched bracket opening 12 include a length l₂ ofapproximately 32 μm (which is substantially similar to the correspondingwidest internal borders of etched bracket openings 10 and 11). Asdepicted in FIG. 4, etched bracket openings 10, 11, and 12 include twolong, substantially straight borders (15 and 15′ shown for etchedbracket opening 11) and two curved ends (16 and 16′ shown for etchedbracket opening 11). As depicted in FIG. 4, a midpoint (i.e., 12midpoint) for one of the long, substantially straight borders of etchedbracket opening 12 is closest to the nearest border of circular opening13. As depicted in FIG. 4, the distance d₂ between the midpoint of theclosest long, substantially straight border of etched bracket opening 12(i.e., 12 midpoint) is approximately 20 μm from the nearest border ofcircular opening 13. Analogously, the midpoints (not shown) of theclosest long, substantially straight borders of etched bracket openings10 and 11 are of a substantially similar distance (i.e., d₂) from thecorresponding closest borders of circular opening 13.

As depicted in FIG. 5, a gray scale etch of the structure shown in FIG.4 creates cavity 14′, which is the result of etchant diffusion throughopenings 10-13. Material is removed immediately beneath openings 10-13as well as laterally between openings 10-13 to create cavity 14′ beneathphotoresist 14. Cavity 14′ includes the areas encompassed by openings10-13 as well. In this example, cavity 14′ features lobes L10, L11, andL12 and indentations in cavity 14′ between lobes L10, L11, and L12 thatserve as blades (i.e., B1011, B1112, and B1012). The border of cavity14′ marks the beginning of a downward slope to create a bowl-likeopening that accommodates a C4 bump to be tested. Blades B1011, B1112,and B1012 are designed to cut through areas of the C4 bump that come incontact with said blades in order to expose the non-oxidized C4 bumpconductive material beneath an outer oxidized layer on the C4 bump.

In the example depicted in FIG. 5, the distance (i.e.,d_(B1011 tip-13 center)) between the center of circular opening 13 (i.e.13 center) and the tip of blade B1011 (i.e., B1011 tip) is approximately34 μm. The distances between the center of circular opening 13 and thetips of blades B1112 and B1012 (i.e., B1112 tip and B1012 tip,respectively) are substantially similar to d_(B1011 tip-13 center). Thedistance (i.e., d_(L11-13 center)) between the center of circularopening 13 and the furthest border of lobe L11, which is a line (shown)between 13 center and L11 midpoint is approximately 52 μm. The distancesbetween the center of circular opening 13 and the furthest borders oflobes of L10 and L12 (measured along lines (not shown) passing between13 center and, respectively, L10 midpoint and L12 midpoint) aresubstantially similar to dL_(11-13 center).

One noticeable difference between cavities 9′ (FIG. 3) and 14′ (FIG. 5)is the sharpness of the created blades. Blades B1011, B1112, and B1012(FIG. 5) are noticeably sharper than blades B56, B67, and B75 (FIG. 3).In other words (and as is illustrated in FIGS. 3 and 5), blades B1011,B1112, and B1012 culminate in a pointed tip, i.e., B1011 tip, B1112 tip,and B1012 tip (FIG. 5) whereas blades B56, B67, and B75 culminate in acurve, the center of which are B56 midpoint, B67 midpoint, and B75midpoint (FIG. 3). The sharper the blades, the lower the force requiredto cut through an oxide layer in a C4 bulb to reach conductive materialbeneath the oxide layer. Hence, cavity 14′ requires less force tosuccessfully test a C4 bulb than cavity 9′.

Optimization of the dimensions of probe cavities such as cavities 9′ and14′ often leverage modeling. Factors that govern the creation of suchprobe cavities via a gray scale etch include one or more of: i) theshape of the beginning etched openings; ii) the dimensions of thebeginning etched openings; iii) the proximity of the beginning etchedopenings to each other; and iv) the conditions employed during the grayscale etch such as etchant type, time-of-etch, temperature, pressure,and other factors such as the method employed (i.e. agitation,ultrasonication, electro-etching etc.).

FIG. 6 depicts a view of cavity 14′ from above and at a 21° angle afterphotoresist 14 has been removed to expose cavity 14′ and surface 15. Invarious embodiments, both surface 15 and cavity 14′ are the sameconductive material as exposed in etched bracket openings 10, 11, 12 andcircular opening 13 (FIG. 4). As depicted in FIG. 6 and described inFIG. 5, cavity 14′ includes lobes L10, L11, and L12, which are formed,in part, by the downward and lateral diffusion of etchant throughopenings 10, 11, and 12 during a gray scale etch.

FIG. 7 depicts a view of cavity 14′ from above and at a 45° angle afterphotoresist 14 has been removed to expose cavity 14′ and surface 15. Atthis angle, four cavity features (L10, L11, L12, and C13) are observed.Cavity center C13 is the result, in part, of etchant diffusing downwardand laterally through circular opening 13 (FIGS. 4 and 5). From thisangle, borders L10-C13, L11-C13, and L12-C13 are visually apparent.These borders mark where the etchant used in the gray scale etchlaterally merged between openings 10, 11, 12, and 13 during the etchingprocess. Cavity center C13 has a lowest depth at 13 center, which is 22μm beneath surface 15. In exemplary embodiments, the 13 center depth isdeep enough to accommodate a C4 bump so that blades B1011, B1112, andB1012 are able to cut through the outer oxide layer of the C4 bump inorder to test the C4 bump.

FIGS. 8A and 8B depict a top-down view and an angled view, respectively,of a probe on a substrate. The two views of the probe depicted in FIG.8A and FIG. 8B show substrate 41 upon which rests probe 40. Probe 40 iscomposed of any conductive material that can be wet-etched. Examples ofsuch conductive material include one or more of: copper, molybdenum,aluminum, nickel etc. In various embodiments, substrate 41 is composedof an organic material such as FR4 (flame retardant resin composed ofepoxy resin) or a ceramic material. Probe 40 includes pad 42 and cavity43. Cavity 43 is formed via a gray scale etch as described supra and viaopenings with dimensions and an arrangement substantially similar toopenings 10, 11, 12, and 13 as described for FIG. 4. The gray scale etchproduces blades B43, B44, and B45.

As described for cavity 14′ in FIGS. 5-7, cavity 43 includes three lobesseparated by three blades. The three blades B43, B44, and B45 serve tocut through the oxide layer of a C4 bulb. In the example shown in FIGS.8A and 8B, the symmetry of cavity 43 is C₃. Other embodiments of thepresent invention are not limited to a C₃ symmetry. In other words,other embodiments of the present invention include examples where morethan three lobes are separated by more than three blades or less thanthree lobes are separated by less than three blades. Thus, embodimentsof the present invention include probes that have one or more blades andone or more lobes. In these alternative embodiments, as is also depictedin the example shown in FIGS. 8A and 8B, the number of lobes equals thenumber of blades. In the example depicted in FIGS. 8A and 8B, thedistance between the center point of cavity 43 (i.e., 43 center) and thetop surface of pad 42 (i.e., 42 top surface) is approximately 30 to 35μm.

In various scenarios, the center point of an probe cavity such as 43center in probe cavity 43 (FIGS. 8A and 8B) needs to be greater than 30μm in depth in order to accommodate the upper crown of a C4 bump with adiameter of approximately 100 μm. The challenge of obtaining a cavitywith such a depth is that the gray scale etching process must continueuntil such a depth is obtained while still retaining blades that aresharp enough, and sufficient distance apart, in order to cut through theoxide layer of the accommodated 100 μm diameter C4 bump. The very natureof a gray scale etch involves a simultaneous downward etch throughopenings in a photoresist as well a lateral etch. The downward etchproduces cavity depth while the lateral etch affects blade profile. Atsome point, allowing a gray scale etch process to proceed until asufficient depth is produced can also lead to blade erosion such thatthe blades can no longer effectively cut into the C4 bump. Thus,maintaining a desired blade profile while obtaining a cavity etchgreater than 30 μm requires an anisotropic etch profile that canaccomplish both feats.

As used herein, the “upper crown,” “crown,” etc. of a C4 bump refers tothe upper portion of the C4 bump that is aligned with the center portionof the probe structure and must be accommodated in order for the bladesof the probe structure to contact and, hence, cut through the oxidelayer of the C4 bump.

In various embodiments of the present invention, the metal crystalorientation of a metal pad affects a gray scale anisotropic etch profileof the metal pad. For example, the use of electroplated copper to form aprobe pad followed by an optimal gray scale etch repeatedly onlyproduces an approximately 23 μm-deep cavity etch while still retaining auseful blade profile. However, if the electroplated copper process isreplaced by a rolled annealed copper process, a 33 μm-deep cavity etchcan be obtained while still retaining a useful blade profile.

In various embodiments, the use of electroplated copper to form a probepad is more cost effective from a manufacturing perspective than the useof the rolled annealed copper process. In these embodiments, otherprocesses described infra provide probe structures that include anopening in the center portion of the probe cavity that allows theaccommodation of the crown of a 100 μm diameter C4 bump.

FIG. 9 depicts a cross section view of probe 40 on top of substrate 41along line CS1 (FIG. 8A). The example depicted in FIG. 9 is a probeformed via a gray scale etch on an electroplated copper pad 42 to formcavity 43. At its deepest, the depth of cavity 43 (i.e., d₄₃) is lessthan 30 μm and, thus, requires a deeper depth in order to accommodatethe crown of a 100 μm diameter C4 bump.

FIGS. 10A and 10B show, respectively, a top view and a cross sectionview along line CS2 that depicts the formation of photoresist layer R1on top of probe 40 and substrate 41 followed by lithography to formopening O44.

FIG. 11 depicts the formation of opening O43 via a wet etch of thestructure depicted in FIG. 10B. Opening O43 is formed by diffusion ofetchant through opening O44 both downward as well as laterally.

FIGS. 12A and 12B depict, respectively, a top view and a cross sectionview along line CS3 showing probe structure 46 on substrate 41 afterremoval of photoresist layer R1. Probe structure 46 includeselectroplated copper pad 42, cavity 45 and cavity opening O43. In thisembodiment, electroplated copper pad 42 is made of copper. In otherembodiments, other conductive materials are used such as, for example,molybdenum and aluminum. Cavity 45 and cavity opening O43 facilitate theaccommodation of the crown of a 100 μm diameter C4 bump so that bladesB43, B44, and B45 will cut through the outer oxidized layer of the C4bump during chip testing.

III. Processes and Structures for Multiple-Level Probes

FIG. 13 depicts an example of a probe 47 that includes an upper bladestructure 120 and a lower base structure 110, which rests on a substrate100. Lower base structure 110 includes cavity 130 that allows theaccommodation of the crown of a C4 bump so that blades 140 are able tocut through an outer oxide layer of said C4 bump during chip testing.Upper blade structure 120 includes optional supporting wall 150 as wellas blades 140. Optional supporting wall 150 provides structural supportfor blades 140. In other embodiments, optional supporting wall 150 isnot included in the probe structure (i.e., individual unconnectedtriangular blades protrude from lower base structure 110). The tips ofblades 140 are a distance z from the outer edge of cavity 130. Invarious embodiments, distance z ranges from 0 μm (i.e., the tips ofblades 140 reach the outer edge of cavity 130) to approximately 10 μmfrom the outer edge of cavity 130.

In the example shown in FIG. 13, probe 47 has three blades. Otherembodiments of the present invention are not limited to a probestructure having three blades. Some of these embodiments include probesthat have an upper blade structure analogous to upper blade structure120, but have more than three blades. Other embodiments include probesthat have an upper blade structure analogous to upper blade structure120, but one or two blades instead of three.

A. Lower Base Structures and Processes

In a first embodiment, lower base structure 110A is formed by initialformation of a toroidal cavity via lithography on top of a substratefollowed by filling said toroidal cavity with conductive material.

FIGS. 14A and 14B depict, respectively, a top view and a cross sectionalview along line CS4 of the lithographical formation of a toroidal cavity162 on a substrate 100A. Photoresist is deposited on substrate 100Afollowed by lithography to form toroidal cavity 162 shown in FIGS. 14Aand 14B. After lithography, photoresist portion 161 prevents thedeposition of conductive material in the future cavity of lower basestructure 110A and photoresist portion 160 prevents the deposition ofconductive material at the future border of lower base structure 110A.

FIGS. 15A and 15B depict, respectively, a top view and a cross sectionalview along line CS5 of the formation of a layer of conductive materialon the structure depicted in FIGS. 14A and 14B followed by mechanicalplanarization to form lower base structure 110A on top of substrate100A. Lower base structure 110A is embedded in photoresist portion 160and surrounding photoresist portion 161 in FIGS. 15A and 15B. In variousembodiments, the depth or height, (i.e., h_(110A)) is approximately 40μm. The conductive material includes one or more of: copper, molybdenum,aluminum, nickel etc.

In a second embodiment, lower base structure 110B is formed by firstfabricating a circular probe pad followed by the creation of a cavity inthe center of the circular probe pad via a wet etch.

FIGS. 16A and 16B depict, respectively, a top view and a cross sectionalview along line CS6 of the lithographical formation of a circular cavity163 on a substrate 100B. Photoresist 165 is deposited on substrate 100Bfollowed by lithography to form circular cavity 163.

FIGS. 17A and 17B depict, respectively, a top view and a cross sectionalview along line CS7 of the deposition of conductive material onto thestructures depicted in FIGS. 16A and 16B followed by mechanicalplanarization to provide circular pad 111 on top of substrate 100B andimbedded in photoresist 165. In various embodiments, the depth orheight, (i.e., h₁₁₁) varies from approximately 20 to approximately 40 μmdepending on a finished probe structure as described infra. Theconductive material includes one or more of: copper, molybdenum,aluminum, nickel etc.

FIGS. 18A and 18B depict, respectively, a top view and a cross sectionalview along line CS8 of the deposition of photoresist 167 onto thestructures depicted in FIGS. 17A and 17B followed by lithography to formopening 166. In this example, h₁₁₁ is approximately 40 μm.

FIG. 19 depicts the formation of cavity 130B via a wet etch of thestructure depicted in FIG. 18B. Cavity 130B is formed by etchantdiffusion through photoresist opening 166.

FIGS. 20A and 20B depict, respectively, a top view and a cross sectionalview along line CS9 of the removal of photoresist 167 from the structuredepicted in FIG. 19 to provide lower base structure 110B embedded inphotoresist 165 and on top of substrate 100B. Lower base structure 110Bincludes cavity 130B.

In a third embodiment, lower base structure 110C is formed by initialformation of a toroidal cavity via lithography on top of circular pad111 followed by filling said toroidal cavity with conductive material.

FIGS. 21A and 21B depict, respectively, a top view and a cross sectionalslice along line CS10 of the lithographical formation of a toroidalcavity 172 on top of circular pad 111 (FIGS. 17A and 17B). Photoresistis deposited on circular pad 111 followed by lithography to formtoroidal cavity 172 shown in FIGS. 21A and 21B. After lithography,photoresist portion 169 prevents the deposition of conductive materialin the future cavity of lower base structure 110C and photoresistportion 170 prevents the deposition of conductive material at the futureborder of lower base structure 110A. In this example, h₁₁₁ isapproximately 20 μm.

FIGS. 22A and 22B depict, respectively, a top view and a cross sectionalslice along line CS11 of the formation of a layer of conductive materialon the structure depicted in FIGS. 21A and 21B followed by mechanicalplanarization to form lower base structure 110C on top of substrate100B. Lower base structure 110C, as depicted in FIGS. 22A and 22B, isthe combination of the conductive material present in circular pad 111and the conductive material deposited in toroidal cavity 172 (FIGS. 21Aand 22B). Thus, in some embodiments, lower base structure 110C iscomposed of two conductive materials, i.e., the conductive material usedto form circular pad 111 and the conductive material used to fill intoroidal cavity 172. The conductive materials include one or more of:copper, molybdenum, aluminum, etc. In the example depicted in FIGS. 22Aand 22B, the height of lower base structure 110C (i.e., h_(110C)) isapproximately 30 μm.

B. Upper Blade Structures and Processes

FIGS. 23A and 23B depict, respectively, a top view and a cross sectionalslice along line CS12 of the formation of blade cavity 173. In thisexample, a photoresist layer is deposited on top of the structuredepicted in FIGS. 15A and 15B followed by lithography to formphotoresist portions 170 and 171. Lithography removes portions of thephotoresist layer to provide blade cavity 173. As depicted in FIG. 23A,blade cavity 173 includes openings for the eventual formation of threeblades and a supporting wall. As illustrated in FIG. 23B, the supportingwall portions of blade cavity 173 have a narrower gap (173 W) betweenphotoresist portions 170 and 171 as opposed to the blade portions ofblade cavity 173 (see 173B).

In various embodiments, the distance gap d_(w) between the support wallportions ranges from 0 μm to approximately 10 μm. Embodiments whered_(w) is equal to 0 μm do not have supporting wall portions of bladecavity 173. In other words, these embodiments just have three separatetriangular blade cavities. In various embodiments, the distance betweeneach tip of the blade portions of blade cavity 173 and the edge of lowerbase structure 110A (i.e., d_(b-c)) ranges from 0 μm to approximately 10μm. The example depicted in FIGS. 23A and 23B includes a cavity withthree blade portions. Other embodiments of the present invention includemore than three blade portions as well as just one or two bladeportion(s).

FIGS. 24A and 24B depict, respectively, a top view and a cross sectionalslice along line CS13 of the formation of upper blade structure 120A ontop of lower base structure 110A to provide probe 47A on top ofsubstrate 100A. In this example, upper blade structure 120A is formed bydeposition of conductive material on top of the structure depicted inFIGS. 23A and 23B followed by mechanical planarization and photoresistremoval. The conductive material includes one or more of: copper,molybdenum, aluminum, rhodium, palladium-cobalt alloy etc. As depictedin FIG. 24A, upper blade structure 120A includes three blades and asupporting wall. As illustrated in FIG. 24B, the supporting wallportions of upper blade structure 120A have a narrower width as opposedto the blade portions of upper blade structure 120A. In variousembodiments, the supporting wall width d_(w) ranges from 0 μm toapproximately 10 μm. Embodiments where d_(w) is equal to 0 μm do nothave a supporting wall. In other words, these embodiments have threeseparate triangular blades on top of lower base structure 110A.

In various embodiments, the distance between each tip of the bladeportions of upper blade structure 120A and the inner edge of lower basestructure 110A (i.e., d_(b-c)) ranges from 0 μm to approximately 10 μm.The finished probe structure exemplified by FIGS. 24A and 24B arecomposed of a lower base structure 110A with a height (i.e., him) ofapproximately 40 μm and an upper blade structure 120A with a height(i.e., h_(120A)) of approximately 20 μm. The example depicted in FIGS.24A and 24B includes three blades. Other embodiments of the presentinvention include more than three blades as well as just one or twoblade(s). As depicted in FIGS. 24A and 24B, lower base structure 110Aincludes cavity 130A in order to accommodate the crown of a 100 μm C4bump. Cavity 130A is cylindrical in shape. Some embodiments includecoating the lower base structure and upper blade structure with a hardmetal such as nickel, rhodium, palladium-cobalt alloy, etc. after thephotoresist has been removed.

FIGS. 25A and 25B depict, respectively, a top view and a cross sectionalslice along line CS14 of the formation of upper blade structure 120B ontop of lower base structure 110B to provide probe 47B on top ofsubstrate 100B. The process for formation of probe 47B from thestructure depicted in FIGS. 20A and 20B follows a substantially similarprocess as the formation of probe 47A from the structure depicted inFIGS. 15A and 15B: i) photoresist is deposited upon the structuredepicted in FIGS. 20A and 20B; ii) lithography is used to create a bladecavity substantially similar to blade cavity 173 (FIGS. 23A and 23B);iii) the blade cavity is filled with a conductive material andplanarized; and iv) removal of all photoresist material to provide probe47B on top of substrate 100B. The conductive material includes one ormore of: copper, molybdenum, aluminum, rhodium, palladium-cobalt alloyetc.

As depicted in FIG. 25A, upper blade structure 120B includes threeblades and a supporting wall. As illustrated in FIG. 24B, the supportingwall portions of upper blade structure 120B have a narrower width asopposed to the blade portions of upper blade structure 120B. In variousembodiments, the supporting wall width d′_(w) ranges from 0 μm toapproximately 10 μm. Embodiments where d′_(w) is equal to 0 μm do nothave a supporting wall. In other words, those embodiments have threeseparate triangular blades on top of lower base structure 110B. Invarious embodiments, the distance between each tip of the blade portionsof upper blade structure 120B and the inner edge of lower base structure110B (i.e., d′_(b-c)) ranges from 0 μm to approximately 10 μm.

The finished probe structure exemplified by FIGS. 25A and 25B arecomposed of a lower base structure 110B with a height (i.e., h_(110B))of approximately 40 μm and an upper blade structure 120B with a height(i.e., h_(120B)) of approximately 20 μm. The example depicted in FIGS.25A and 25B includes three blades. Other embodiments of the presentinvention include more than three blades as well as just one or twoblade(s). As depicted in FIGS. 25A and 25B, lower base structure 110Bincludes cavity 130B in order to accommodate the crown of a 100 μm C4bump. Cavity 130B is bowl-shaped because it is formed via a wet-etch(see FIG. 9). Some embodiments include coating the lower base structureand upper blade structure with a hard metal such as nickel, rhodium,palladium-cobalt alloy, etc. after the photoresist has been removed.

FIGS. 26A and 26B depict, respectively, a top view and a cross sectionalslice along line CS15 of the formation of upper blade structure 120C ontop of lower base structure 110C to provide probe 47C on top ofsubstrate 100B. The process for formation of probe 47C from thestructure depicted in FIGS. 22A and 22B follows a substantially similarprocess as the formation of probe 47A from the structure depicted inFIGS. 15A and 15B: i) photoresist is deposited upon the structuredepicted in FIGS. 22A and 22B; ii) lithography is used to create a bladecavity substantially similar to blade cavity 173 (see FIGS. 23A and23B); iii) the blade cavity is filled with a conductive material andplanarized; and iv) removal of all photoresist material to provide probe47C on top of substrate 100B. The conductive material includes one ormore of: copper, molybdenum, aluminum, rhodium, palladium-cobalt alloyetc.

As depicted in FIG. 26A, upper blade structure 120C includes threeblades and a supporting wall. As illustrated in FIG. 26B, the supportingwall portions of upper blade structure 120C have a narrower width asopposed to the blade portions of upper blade structure 120C. In variousembodiments, the supporting wall width d″_(w) ranges from 0 μm toapproximately 10 μm. Embodiments where d″_(w) is equal to 0 μm do nothave a supporting wall. In other words, these embodiments have threeseparate triangular blades on top of lower base structure 110C. Invarious embodiments, the distance between each tip of the blade portionsof upper blade structure 120C and the inner edge of lower base structure110C (i.e., d″_(b-c)) ranges from 0 μm to approximately 10 μm.

The finished probe structure exemplified by FIGS. 26A and 26B arecomposed of a lower base structure 110C with a height (i.e., h_(110C))of approximately 30 μm between the upper blade structure 120C andsubstrate 100B, a height of approximately 20 μm between the base ofcavity 130C and substrate 100B (i.e., h₁₁₁), and an upper bladestructure 120C with a height (i.e., h_(120C)) of approximately 20 μm.The example depicted in FIGS. 26A and 26B includes three blades. Otherembodiments of the present invention include more than three blades aswell as just one or two blade(s). As depicted in FIGS. 26A and 26B,lower base structure 110C includes cavity 130C in order to accommodatethe crown of a 100 μm C4 bump. Cavity 130A is cylindrical in shape. Someembodiments include coating the lower base structure and upper bladestructure with a hard metal such as nickel, rhodium, palladium-cobaltalloy, etc. after the photoresist has been removed.

FIGS. 27A and 27B depict, respectively, a top view and a cross sectionalslice along line CS16 of the formation of upper blade structure 120D ontop of lower base structure 111 to provide probe 47D on top of substrate100B. The process for formation of probe 47D from the structure depictedin FIGS. 17A and 17B follows a substantially similar process as theformation of probe 47A from the structure depicted in FIGS. 15A and 15B:i) photoresist is deposited upon the structure depicted in FIGS. 17A and17B; ii) lithography is used to create a blade cavity substantiallysimilar to blade cavity 173 (see FIGS. 23A and 23B); iii) the bladecavity is filled with a conductive material and planarized; and iv)removal of all photoresist material to provide probe 47D on top ofsubstrate 100B. The conductive material includes one or more of: copper,molybdenum, aluminum, rhodium, palladium-cobalt alloy etc.

The finished probe structure exemplified by FIGS. 27A and 27B arecomposed of a lower base structure (circular pad 111) with a height(i.e., h₁₁₁) of approximately 20 μm between the upper blade structure120D and substrate 100B and an upper blade structure 120D with a height(i.e., h_(120D)) of at least approximately 35 μm. The example depictedin FIGS. 27A and 27B includes three blades. Other embodiments of thepresent invention include more than three blades as well as just one ortwo blade(s). In contrast to the structures depicted in FIGS. 24A, 24B,25A, 25B, 26A, and 26B, the structure shown in FIGS. 27A and 27B doesnot include a cavity in the lower base structure (i.e., circular pad111). In this embodiment, the height of upper blade structure 120D (35μm or greater) is large enough to allow cutting through the oxide layerof a 100 μm C4 bump without requiring a cavity in the lower basestructure in order to accommodate the crown of the C4 bump. Someembodiments include coating the lower base structure and upper bladestructure with a hard metal such as nickel, rhodium, palladium-cobaltalloy, etc. after the photoresist has been removed.

In exemplary embodiments, the finished probes described in FIGS. 13,24A-B, 25A-B, 26A-B, and 27A-B are subjected to a final coating with anoxide-free metal such as gold to ensure low contact resistance duringprobing. These embodiments include the use of copper plating for thelower base structures and the upper blade structures followed by nickelcoating for hardness and strength and then a final gold coating toprovide low contact resistance.

C. Blade Sharpening

In various embodiments of the present invention, fabrication of theupper blade structures of probes provides blade tips that are roundedwhen observed at the microscopic scale. In some of these embodiments,the blade tips are sharpened by optical proximity correction (OPC).

FIG. 28 depicts an example of a rounded blade tip as observedmicroscopically. Included in the structure depicted by FIG. 28 issupporting wall portion 200 and blade 201. Blade 201 has a rounded bladetip 202, the sharpness of which can be determined by radius r₃ ofoverlapping circle 203. Rounded blade tip 202 becomes sharper as theradius r₃ of overlapping circle 203 becomes smaller. In this example, r₃of rounded blade tip 202 is approximately 4 μm after fabrication. AfterOPC, r₃ is lowered to approximately 2.5 μm, hence rounded blade tip 202is sharper after OPC than then prior to OPC.

What is claimed is:
 1. A probe structure for cutting into an oxide layerof C4 bump comprising: a lower base structure on top of a substrate,wherein the lower base structure includes a toroid layer of conductivematerial that rests on top of a circular pad of conductive material; andan upper blade structure on top of the lower base structure, wherein:(a) a crown of a C4 bump is accommodated by both of the following: (i) acavity present in the lower base structure, wherein the cavity presentin the lower base structure is bowl-shaped; and (ii) a height of theupper blade structure; (b) the upper blade structure includes one ormore blades, wherein (i) one or more cutting edges of the one or moreblades point towards a center position of the probe structure and (ii)the one or more cutting edges of the one or more blades are between 0 μmand approximately 10 μm from an edge of the cavity present in the lowerbase structure; (c) the upper blade structure includes a bladesupporting wall; and (d) the upper blade structure has a height of atleast 35 μm.